AZ ALUMINIUMIPAR V. OETEVES TAVLATI TERMELESI-FEJLESZTESI TERVE; KUELOENOES TEKINTETTEL A BAUXITBANYASZATRA, AZ ASVANYVAGYONGAZDALKODASRA ES FOELDTANI KUTATASRA. = LE PLAN QUINQUENNAL ET A LONG TERME DE L'INDUSTRIE DE L'ALUMINIUM EN INSISTANT SUR L'EXPLOITATION DE LA BAUXITE, L'ECONOMIE MINIERE ET LES PROSPECTIONS GEOLOGIQUESDOZSA L.1976; FOLDT. KUTATAS; MAGYAR; DA. 1976; VOL. 19; NO 3; PP. 22-25; 3 ILL.; (ORSZ. FOELDT. ANKET; BUDAPEST; 1976)Article

Selective detection of deep recombinative centersDOZSA, L.Solid-state electronics. 1986, Vol 29, Num 9, pp 861-863, issn 0038-1101Article

A bauxitbanyaszat és az aluminiumipar aktualis kérdése = Problèmes actuels des mines de bauxite et de l'industrie de l'aluminiumDOZSA, L.Bányászati és kohászati lapok. Bányászat. 1989, Vol 122, Num 8, pp 526-530, issn 0522-3512, 5 p.Article

SELECTIVE REACTIONS OF NUCLEOBASES UNDER BIOLOGICAL CONDITIONS.BECK MT; DOZSA L.1977; BIOINORG. CHEM.; U.S.A.; DA. 1977; VOL. 7; NO 1; PP. 1-4; BIBL. 11 REF.Article

THE EFFECTIVE CHARGES OF FECL₄^- AND PACL₄^2- FROM INFRARED AND RAMAN MEASUREMENTS.LARSSON R; DOZSA L.1977; CHEM. SCRIPTA; SUEDE; DA. 1977; VOL. 11; NO 2; PP. 49-51; BIBL. 21 REF.Article

KINETICS OF THE COMPLEX FORMATION BETWEEN IRON (III) AND ALPHA -OXY-ALPHA -DIBUTYLPHOSPHINEOXIDO-PROPIONIC ACID.MIFTAHOVA A; DOZSA L; BECK MT et al.1977; ACTA CHIM. ACAD. SCI. HUNGAR.; HONGR.; DA. 1977; VOL. 92; NO 4; PP. 379-386; ABS. RUSSE; BIBL. 6 REF.Article

MECHANISM OF THE PERMANGANATE-NITRITE REACTION. II. THE ROLE OF COMPLEX FORMATION IN THE KINETICS OF THE REACTION.DOZSA L; SZILASSY I; BECK MT et al.1977; INORG. CHIM. ACTA; ITAL.; DA. 1977; VOL. 23; NO 1; PP. 29-34; BIBL. 10 REF.Article

MECANISME DE LA REACTION PERMANGANATE-NITRITE. II. LE ROLE DE LA FORMATION DE COMPLEXE DANS LA CINETIQUE DE REACTIONDOZSA L; SZILASSY I; BECK M et al.1976; MAGYAR KEM. FOLYOIRAT; MAGYAR.; DA. 1976; VOL. 82; NO 3; PP. 145-150; ABS. ANGL.; BIBL. 10 REF.Article

REACTIONS DU PENTACYANONITROSYLFERRATE(II) AVEC L'HYDROXYLAMINE, L'HYDRAZINE ET NH₃DOZSA L; SZILASSY I; BECK M et al.1973; MAGYAR KEM. FOLYOIRAT; MAGYAR.; DA. 1973; VOL. 79; NO 1; PP. 45-46; ABS. ANGL.; BIBL. 7 REF.Serial Issue

Deep level characterization in semi-insulating LEC gallium arsenideFORNARI, R; DOZSA, L.Physica status solidi. A. Applied research. 1988, Vol 105, Num 2, pp 521-530, issn 0031-8965Article

The copper catalysed reduction of nitric oxide by ammonia in aqueous solution studied by membrane inlet mass spectrometryPENZELI, P; DOZSA, L; DEGN, H et al.Journal of molecular catalysis. A, Chemical. 1998, Vol 136, Num 3, pp 235-242, issn 1381-1169Article

Trap centers in cuprous oxidePAPADIMITRIOU, L; DIMITRIADIS, C. A; DOZSA, L et al.Solid-state electronics. 1988, Vol 31, Num 10, pp 1477-1482, issn 0038-1101Article

Electrical properties of polysilicon n⁺-i-p junctionsDIMITRIADIS, C. A; PAPADIMITRIOU, L; DOZSA, L et al.Semiconductor science and technology. 1988, Vol 3, Num 6, pp 558-563, issn 0268-1242Article

Kinetics of the reactions of pentacyanonitrosylferrate(II) with mono- and diamino acidsKATHO, A; BODI, Z; DOZSA, L et al.Inorganica chimica acta. 1984, Vol 83, Num 3, pp 145-150, issn 0020-1693Article

Electrical properties of GaAs schottky diodes with embedded InAs self-assembled quantum dotsHASTAS, N. A; DIMITRIADIS, C. A; DOZSA, L et al.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 325-327Conference Paper

New optoelectronic materials: Effects of annealing upon the formation of epitaxial iron silicide nanostructures on Si(001)MOLNAR, G; DOZSA, L; VERTESY, Z et al.Physica. E, low-dimentional systems and nanostructures. 2013, Vol 51, pp 79-86, issn 1386-9477, 8 p.Conference Paper

On the magnetic properties of cadmium-doped Y-Ba-Cu-O high-temperature superconductorsSERFOSO, G; KISS, L. F; ZSOLDOS, E et al.Journal of materials science letters. 1994, Vol 13, Num 9, pp 693-695, issn 0261-8028Article

Thickness dependent formation and properties of GdSi₂/Si(100) interfacesPETÖ, G; MOLNAR, G; DOZSA, L et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 81, Num 5, pp 975-980, issn 0947-8396, 6 p.Article

Dynamical behaviour of the δ-doped Au/GaAs Schottky barrierHUBIK, P; DOZSA, L; LIPAVSKY, P et al.Physica status solidi. A. Applied research. 2003, Vol 195, Num 1, pp 61-66, issn 0031-8965, 6 p.Conference Paper

Current instabilities in GaAs/InAs quantum dot structuresHORVATH, Zs. J; PODÖR, B; FRIGERI, P et al.SPIE proceedings series. 2001, pp 153-156, isbn 0-8194-4116-3Conference Paper

Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structuresHORVATH, Zs. J; DOZSA, L; VO VAN TUYEN et al.Thin solid films. 2000, Vol 367, Num 1-2, pp 89-92, issn 0040-6090Conference Paper

Investigation of the morphology and electrical characteristics of FeSi₂ quantum dots on siliconDOZSA, L; MOLNAR, G; HORVATH, Zs. J et al.Applied surface science. 2004, Vol 234, Num 1-4, pp 60-66, issn 0169-4332, 7 p.Conference Paper

Effect of neutron bombardment on the electrical characteristics of n-GaAsHORVATH, Z. J; GOMBIA, E; PAL, D et al.SPIE proceedings series. 2000, pp 230-233, isbn 0-8194-3601-1Conference Paper

Current-voltage anomalies on polycrystalline GdSi₂/p-Si Schottky junctions due to grain boundariesKOVACS, B; MOLNAR, G; DOZSA, L et al.Vacuum. 1995, Vol 46, Num 8-10, pp 983-985, issn 0042-207XConference Paper

Electrical and photoelectrical behaviour of Au/n-CdTe junctionsHORVATH, Zs. J; MAKHNIY, V. P; PODÖR, B et al.SPIE proceedings series. 2001, pp 258-261, isbn 0-8194-4116-3Conference Paper